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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP33B/D Complementary Silicon High-Power Transistors . . . for general-purpose power amplifier and switching applications. * * * * 10 A Collector Current Low Leakage Current -- ICEO = 0.7 mA @ 60 V Excellent dc Gain -- hFE = 40 Typ @ 3.0 A High Current Gain Bandwidth Product -- hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz TIP33B* TIP33C PNP TIP34B* TIP34C *Motorola Preferred Device NPN MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB TIP33B TIP34B 80 V 80 V TIP33C TIP34C 100 V 100 V Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS 80 WATTS hFE , DC CURRENT GAIN II II IIIIIIIIIIIIIIIIIIIIIII I II II I I IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I I II II IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I I IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII 5.0 10 15 Collector Current -- Continuous Peak (1) Base Current -- Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C 3.0 PD 80 0.64 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic CASE 340D-02 TO-218AC Symbol RJC RJA Max Unit Thermal Resistance, Junction to Case 1.56 35.7 _C/W _C/W Junction-To-Free-Air Thermal Resistance (1) Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%. 500 200 100 50 20 10 5.0 0.1 VCE = 4.0 V TJ = 25C NPN PNP 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 1. DC Current Gain Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 (c) Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 1 TIP33B TIP33C TIP34B TIP34C IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) II I I I I II I I I IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (1) (IC = 30 mA, IB = 0) Collector-Emitter Cutoff Current (VCE = 60 V, IB = 0) VCEO(sus) Vdc TIP33B, TIP34B TIP33C, TIP34C 80 100 -- -- -- -- -- ICEO ICES 0.7 0.4 1.0 mA mA mA TIP33B, TIP33C, TIP34B, TIP34C Collector-Emitter Cutoff Current (VCE = Rated VCEO, VEB = 0) Emitter-Base Cutoff Current (VEB = 5.0 V, IC = 0) IEBO ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 A, VCE = 4.0 V) (IC = 3.0 A, VCE = 4.0 V) hFE -- 40 20 -- -- -- -- -- 100 1.0 4.0 1.6 3.0 Collector-Emitter Saturation Voltage (IC = 3.0 A, IB = 0.3 A) (IC = 10 A, IB = 2.5 A) Base-Emitter On Voltage (IC = 3.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V) VCE(sat) Vdc VBE(on) Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 0.5 A, VCE = 10 V, f = 1.0 kHz) hfe fT 20 -- -- -- Current-Gain -- Bandwidth Product (IC = 0.5 A, VCE = 10 V, f = 1.0 MHz) 3.0 MHz (1) Pulse Test: Pulse Width = 300 s, Duty Cycle v 2.0%. 20 L = 200 H IC/IB 5.0 VBE(off) = 0 to 5.0 V TC = 100C 15 10 5.0 3.0 2.0 1.0 0.5 0.2 0.1 1.0 10 ms 15 1.0 ms dc 300 s 10 TIP33C TIP34C TIP33B TIP34B SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT TC = 25C TIP33B TIP34B TIP33C TIP34C 70 100 5.0 0 0 60 80 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 20 30 50 2.0 3.0 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Rated Forward Bias Safe Operating Area Figure 3. Maximum Rated Forward Bias Safe Operating Area FORWARD BIAS The Forward Bias Safe Operating Area represents the voltage and current conditions these devices can withstand during forward bias. The data is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10%, and must be derated thermally for TC > 25_C. 2 REVERSE BIAS The Reverse Bias Safe Operating Area represents the voltage and current conditions these devices can withstand during reverse biased turn-off. This rating is verified under clamped conditions so the device is never subjected to an avalanche mode. Motorola Bipolar Power Transistor Device Data TIP33B TIP33C TIP34B TIP34C PACKAGE DIMENSIONS C B Q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 U S K L 1 2 4 A 3 D V G J H DIM A B C D E G H J K L Q S U V STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 340D-02 ISSUE B Motorola Bipolar Power Transistor Device Data 3 TIP33B TIP33C TIP34B TIP34C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Bipolar Power Transistor Device Data TIP33B/D *TIP33B/D* |
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